Avago Technologies’ MGA-30116 is a high linearity ? Watt
PA with good OIP3 performance and exceptionally good
PAE at p1dB gain compression point, achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The adjustable temperature compensated internal bias
circuit allowed the device to be operated at either class A
or class AB operation
The MGA-30116 is housed inside a standard 16 pin QFN
3X3 package.
Applications
? Class A driver amplifi er for GSM/CDMA Base Stations.
? General purpose gain block.
Component Image
16 pins QFN 3x3
Notes:
Package marking provides orientation and identifi cation
“30116” = Device Part Number
“YYWW” = Work Week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
Features
? High linearity and P1dB
? Built in adjustable temperature compensated internal
bias circuitry
? GaAs E-pHEMT Technology [1]
? Standard QFN 3X3 package
? 5V supply
? Excellent uniformity in product specifi cations
? Tape-and-Reel packaging option available
? MSL-1 and Lead-free
? High MTTF for base station application
Specifi cations
900MHz; 5V, 202.8mA (typical)
? 17.0 dB Gain
? 44.1 dBm Output IP3
? 27.7 dBm Output Power at 1dB gain compression
? 47.0% PAE at P1dB
? 2.0 dB Noise Figure
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices
