HMC326MS8GETR 射频放大器

The HMC326MS8G & HMC326MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC driver amplifiers which

operate between 3.0 and 4.5 GHz. The amplifier

is packaged in a low cost, surface mount 8 leaded

package with an exposed base for improved RF and

thermal performance. The amplifier provides 21 dB

of gain and +26 dBm of saturated power from a +5V

supply voltage. Power down capability is available to

conserve current consumption when the amplifier is

not in use. Internal circuit matching was optimized to

provide greater than 40% PAE.

HMC326MS8GETR  射频放大器HMC326MS8GETR  射频放大器HMC326MS8GETR  射频放大器