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供应IC集成电路HAT2168H

地区：广东 深圳
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深圳市菲发特电子科技有限公司

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Item
  Symbol
 Ratings
 Unit
Drain to source voltage
 VDSS
 30
 V
Gate to source voltage
 VGSSVGSS
 ±20
 V
Drain current
  ID
 30
 A
Drain peak current
 ID(pulse)Note1
 120
 A
Body-drain diode reverse drain current
 IDR
 30 A
Avalanche current
  IAP Note 2
 15 A
Avalanche energy
 EAR Note 2
 22 mj
Channel dissipation
 Pch Note3
 15 W
Channel to Case Thermal Resistance
 Cθch-C
 8.33
 °C/W
Channel temperature
 Tch
  150
 °C
Storage temperature
 Tstg
 – 55 to + 150
 °C

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc=25°C
型号

HAT2168H

品牌

RENESAS

封装

SOT669

批次

15+