UPD78F0513AGA-GAM-AX全新原装现货

型号：UPD78F0513AGA-GAM-AX

现货，原厂进口全新原装，假一赔十！

UPD78F0513AGA

UPD78F0513AGA

UPD78F0513AGA

UPD78F0513AGA

(1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN:  Waveform distortion due to input noise or a reflected wave may cause malfunction.    If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction.    Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN).     (2) HANDLING OF UNUSED INPUT PINS:    Unconnected CMOS device inputs can be cause of malfunction.   If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction.    CMOS devices behave differently than Bipolar or NMOS devices.    Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry.    Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin.    All handling related to unused pins must be judged separately for each device and according to related specifications governing the device.     (3) PRECAUTION AGAINST ESD:  A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation.    Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred.  Environmental control must be adequate.    When it is dry, a humidifier should be used.    It is recommended to avoid using insulators that easily build up static electricity.    Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material.    All test and measurement tools including work benches and floors should be grounded.