IRLML2502TRPBF TI MOS场效应管FET-N沟道

IRLML2502TRPBF

IR/Infineon

 Ultra Low On-Resistance

 N-Channel MOSFET

 SOT-23 Footprint

 Low Profile (<1.1mm)

 Available in Tape and Reel

 Fast Switching

 Lead-Free

 RoHS Compliant, Halogen-Free

These N-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low onresistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3, is ideal for applications where printed circuit

board space is at a premium. The low profile (<1.1mm) of the Micro3

allows it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards. The thermal

resistance and power dissipation are the best available.

IRLML2502TRPBF产品图片：

IRLML2502TRPBF参数：

型号：IRLML2502TRPBF

品牌：IR/Infineon

封装规格：SOT23

存储温度：-55-100°

存储环境：常温

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