场效应管MMBF4393LT1G原装进口ON现货

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场效应管MMBF4393LT1G

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.


产品图片:


场效应管MMBF4393LT1G

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.



场效应管MMBF4393LT1G

The Zero−Gate−Voltage Drain Current (IDSS) is the

principle determinant of other J−FET characteristics.

Figure 10 shows the relationship of Gate−Source Off

Voltage (VGS(off)) and Drain−Source On Resistance

(rDS(on)) to IDSS. Most of the devices will be within

±10% of the values shown in Figure 10. This data will

be useful in predicting the characteristic variations for

a given part number.

For example:

Unknown

rDS(on) and VGS range for an MMBF4392

The electrical characteristics table indicates that an

MMBF4392 has an IDSS range of 25 to 75 mA. Figure

10 shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30

Ohms for IDSS = 75 mA. The corresponding VGS values

are 2.2 V and 4.8 V.



场效应管MMBF4393LT1G 产品参数:

型号:MMBF4393LT1G

品牌:ON(安森美)

类型:场效应管

封装:SOT23

材料:硅

电流:低

电压:30V

功耗:低

频率:

存储温度:-55-100°

工作温度:0-85°

存储环境:常温


型号/规格

MMBF4393LT1G

品牌/商标

ON(安森美)

封装形式

SOT23

环保类别

无铅环保型

安装方式

贴片式

包装方式

卷带编带包装

功率特征

大功率