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场效应管MMBF4393LT1G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
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场效应管MMBF4393LT1G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
场效应管MMBF4393LT1G
The Zero−Gate−Voltage Drain Current (IDSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rDS(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30
Ohms for IDSS = 75 mA. The corresponding VGS values
are 2.2 V and 4.8 V.
型号:MMBF4393LT1G
品牌:ON(安森美)
类型:场效应管
封装:SOT23
材料:硅
电流:低
电压:30V
功耗:低
频率:
存储温度:-55-100°
工作温度:0-85°
存储环境:常温
MMBF4393LT1G
ON(安森美)
SOT23
无铅环保型
贴片式
卷带编带包装
大功率