TK25E60X,S1X MOSFET现货

封装:TO-220-3

通道数量:1Channel

晶体管极性:N-Channel

Vds-漏源极击穿电压:600V

Id-连续漏极电流:25A

RdsOn-漏源导通电阻:105mOhms

Vgs-栅极-源极电压:30V

Vgsth-栅源极阈值电压:2.5V

Qg-栅极电荷:40nC

最小工作温度:-55C

最大工作温度:+150C

Pd-功率耗散:180W

配置:Single

通道模式:Enhancement

商标名:DTMOSIV-H

系列:TK25E60X

品牌:Toshiba

下降时间:4ns

产品类型:MOSFET

上升时间:15ns

我们的方案类型包括有标准显示器，ATV电视，车载显示器，

DLP/LCD投影机，医疗显示器，摄影显示器，视频拼接分割，

以及各种专业领域显示器。特别是在客户专案制定这块，

我们有丰富的经验，可以根据不同项目的要求开发出相对应的软硬件产品。

TK25E60X,S1X

STM8S105K4T6CTR

STM8L151K4U6

STM32L011G4U6TR

STM32L011G4U6TR

STM32L011G4U6TR

STM8L151G6U6TR

STM8L151G6U6TR

STM8L151G6U6TR

STM8L151K6T6TR

STM8L151K6T6TR

STM8L151K6T6TR

STM32F031F6P6TR

TK25E60X,S1X

STM32F031F6P6TR

STM32F031F6P6TR

STM8L151K4T6TR

STM8L151K4T6TR

STM8L151K4T6TR

STM8S105K6U6

STM8L151K6U6TR

STM8L151K6U6TR

STM8L151K6U6TR

STM32F031F6P7TR

STM32F031F6P7TR

STM32F031F6P7TR

STM32L011F4U3TR

STM32L011F4U3TR

STM32L011F4U3TR

TK25E60X,S1X

STM8S105C6T6TR

STM8S105C6T6TR

STM8S105C6T6TR

STM8S105C4T6TR

STM8S105C4T6TR

STM8S105C4T6TR

STM32L031E6Y6TR

STM32L031E6Y6TR

STM32L031E6Y6TR

STM32F031G6U6TR

STM32F031G6U6TR

STM32F031G6U6TR

STM8S105K4T3CTR

TK25E60X,S1X