CGH40010F RF JFET 晶体管

CGH40010F

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-6.0GHz, 10 Watt

10 W, DC - 6 GHz, RF Power GaN HEMT

Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron  mobility transistor (HEMT). The CGH40010, operating from a 28 volt  rail, offers a general purpose, broadband solution to a variety of RF and  microwave applications. GaN HEMTs offer high efficiency, high gain and  wide bandwidth capabilities making the CGH40010 ideal for linear and  compressed amplifier circuits. The transistor is available in both screwdown,  flange and solder-down, pill packages.

FEATURES CGH40010F

• Up to 6 GHz Operation

• 16 dB Small Signal Gain at 2.0 GHz

• 14 dB Small Signal Gain at 4.0 GHz

• 13 W typical PSAT

• 65 % Efficiency at PSAT

• 28 V Operation

APPLICATIONS CGH40010F

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

型号: CGH40010F 

制造商: Cree, Inc. 

产品种类: 射频结栅场效应晶体管(RF JFET)晶体管 

RoHS:  无铅环保  

晶体管类型: HEMT 

技术: GaN 

增益: 14.5 dB 

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 120 V 

Vgs-栅源极击穿电压 : - 10 V to 2 V 

Id-连续漏极电流: 1.5 A 

输出功率: 12.5 W 

最大漏极/栅极电压: - 

最小工作温度: - 40 C 

最大工作温度: + 150 C 

Pd-功率耗散: - 

安装风格: Screw Mount