VOM617A-8X001T 晶体管输出光电耦合器

VOM617A-8X001T

晶体管输出光电耦合器 Phototransistor Out CTR 130-260% 5mA VDE

Low Input Current, Phototransistor Output, SOP-4,  Mini-Flat Package

FEATURES VOM617A-8X001T

• Operating temperature from - 55 °C to + 110 °C

• SOP-4 mini-flat package

• Isolation test voltage, 3750 VRMS

• Low saturation voltage

• Fast switching times

• Low coupling capacitance

• End-stackable, 0.100" (2.54 mm) spacing

• CTR range 40 % to 600 %, IF = 5 mA

APPLICATIONS VOM617A-8X001T

• PLCs

• Telecommunication

• Lighting control system

• Solar inverters

• AC drives

DESCRIPTION VOM617A-8X001T

The 110 °C rated VOM617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.

These coupling devices are designed for signal transmission between two electrically separated circuits.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT

DC forward current IF 60 mA

Reverse voltage VR 6 V

Power dissipation Pdiss 70 mW

Surge forward current tp ≤ 10 μs IFSM 2.5 A