TC58BVG0S3HTA00 NAND闪存

TC58BVG0S3HTA00

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM

NAND闪存 3.3V 1Gb 24nm SLC NAND (EEPROM)

DESCRIPTION

The TC58BVG0S3HTA00 is a single 3.3V 1Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. TheThe device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unitThe Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

The TC58BVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

The TC58BVG0S3HTA00 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally

FEATURES

• Organization x8

Memory cell array 2112 × 64K × 8

Register 2112× 8

Page size 2112 bytes

Block size (128K + 4K) bytes

• Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read

• Mode control

Serial input/output

Command control

• Number of valid blocks

Min 1004 blocks

Max 1024 blocks

• Power supply

VCC = 2.7V to 3.6V

• Access time

Cell array to register 40 μs typ.

Read Cycle Time 25 ns min (CL=50pF)

• Program/Erase time

Auto Page Program 330 μs/page typ.

Auto Block Erase 2.5 ms/block typ.