MBRS2H100T3G 二极管 ON

MBRS2H100T3G

肖特基二极管与整流器 SCHOTTKY 2A 100V

This MBRS2H100T3G device employs the Schottky Barrier principle in a  metal−to−silicon power rectifier. Features epitaxial construction with  oxide passivation and metal overlay contact. Ideally suited for low  voltage, high frequency switching power supplies; free wheeling  diodes and polarity protection diodes.

MBRS2H100T3G Mechanical Characteristics

• Case: Molded Epoxy

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)

• Cathode Polarity Band

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• ESD Ratings:

♦ Machine Model = C

♦ Human Body Model = 3B

• These Devices are Pb−Free and are RoHS Compliant

• Device Meets MSL1 Requirements

MBRS2H100T3G Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guard−Ring for Overvoltage Protection

• Low Forward Voltage Drop

• NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*