MJ11033G 达林顿晶体管 ON

MJ11033G

达林顿晶体管 50A 120V Bipolar Power PNP

High-Current  Complementary Silicon  Power Transistors

MJ11033G High−Current Complementary Silicon Power Transistors are for use  as output devices in complementary general purpose amplifier  applications.

MJ11033G There are two limitations on the power−handling ability

of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200C; TC is

variable depending on conditions. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

MJ11033G Features

• High DC Current Gain − 

hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200C

• Pb−Free Packages are Available*