MBRS3200T3G 二极管 ON

MBRS3200T3G

肖特基二极管与整流器 3A 200V

This MBRS3200T3G device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

MBRS3200T3G Features

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Very High Blocking Voltage − 200 V

• 175°C Operating Junction Temperature

• Guard−Ring for Stress Protection

MBRS3200T3G Mechanical Charactersistics

• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Cathode Polarity Band

• Device Meets MSL 1 Requirements

• ESD Ratings:

♦ Machine Model = A

♦ Human Body Model = 1C