MW7IC2240NR1 射频放大器 NXP

MW7IC2240NR1

射频放大器 2170MHZ 4W TO270WB16

RF LDMOS Wideband Integrated Power Amplifiers

The MW7IC2240N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA.

Features MW7IC2240NR1

• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters

• On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1)

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

Typical Performance  MW7IC2240NR1

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,

IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 Watts Avg., f = 2112.5 MHz,

IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @

0.01% Probability on CCDF.

Power Gain — 30 dB

Power Added Efficiency — 14%

ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth