TOSHIBA东芝TK13A65U MOSFET

TK13A65U
1 2009-03-24
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK13A65U
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
• High forward transfer admittance: ?Yfs? = 8.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 650 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 13
Drain current Pulse (t = 1 ms)
(Note 1) IDP 26
A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy
(Note 2) EAS 86 mJ
Avalanche current IAR 13 A
Repetitive avalanche energy (Note 3) EAR 4.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 0.9 mH, RG = 25 Ω, IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Ф3.2 ± 0.2 10 ± 0.3 2.7 ± 0.2
A
1.14 ± 0.15
0.69 ± 0.15
2.54
3.9 3.0
13 ± 0.5 15.0 ± 0.3
2.8 MAX.
2.54
4.5 ± 0.2
1 2 3
0.64 ± 0.15
2.6 ± 0.1
Ф0.2 M A
JEDEC ?
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
Internal Connection
1: Gate
2: Drain
3: Source