MOS管封测

极性：NPN

Drain-SourceVoltage漏源电压,V_DSS：30V

Gate-to-SourceVoltage-Continuous栅源电压,V_GSS：±20V

CurrentDrainContinuous漏极电流连续,I_D：50A

DrainCurrentContinuous漏极电流连续,(T_C+100°C),I_D：35A

lPowerDissipation功耗,P_D：60W

OperatingJunctionAndStorageTemperatureRange工作结点和储存温度,T_J,T_STG：-55~175°C

有各类型的MOS管封测需求，可以联系，主打100V内，封装类型有SOP8,DFN,T0-252,TO-263,TO220.SOT23等