供应S70KS1282GABHB020集成电路 存储器

Features ? Interface - HYPERBUS? interface - 1.8 V / 3.0 V interface support ? Single-ended clock (CK) - 11 bus signals ? Optional differential clock (CK, CK#) - 12 bus signals - Chip select (CS#) - 8-bit data bus (DQ[7:0]) - Hardware reset (RESET#) - Bidirectional read-write data strobe (RWDS) ? Output at the start of all transactions to indicate refresh latency ? Output during read transactions as read data strobe ? Input during write transactions as write data mask - Optional DDR center-aligned read strobe (DCARS) ? During read transactions RWDS is offset by a second clock, phase shifted from CK ? The phase shifted clock is used to move the RWDS transition edge within the read data eye ? Performance, power, and packages - 200 MHz maximum clock rate - DDR - transfers data on both edges of the clock - Data throughput up to 400 MBps (3,200 Mbps) - Configurable burst characteristics ? Linear burst ? Wrapped burst lengths: 16 bytes (8 clocks) 32 bytes (16 clocks) 64 bytes (32 clocks) 128 bytes (64 clocks) ? Hybrid option - one wrapped burst followed by linear burst on 64 Mb. Linear burst across die boundary is not supported. - Configurable output drive strength - Power modes[1] ? Hybrid sleep mode ? Deep power down - Array refresh ? Partial memory array(1/8, 1/4, 1/2, and so on) ? Full memory array - Package ? 24-ball FBG