供应ZH130NG场效应管MOS
地区：广东 深圳
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This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
VDS=100V,ID=4.1A,RDS(ON)=140mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available.
ZH130NG
杜因特
VSSOP8
无铅环保型
贴片式
卷带编带包装
ZB005NG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
MC006DNG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
SB006NG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
KH310NG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,R818,MR813,A40I
GH003TG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616
MOS管封装样式,杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
DB004NG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616
QB005DNG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
MOS封装解析,杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
TC030NG杜因特MOS场效应管Allwinner全志H3,H2,H6AI,H313,H616,H133,A20,A33,R16,R818,MR813,A40I
