供应IRL640SPBF晶体管 原厂原装进口现货
地区：广东 深圳
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欧盟RoHS指令 Compliant with Exemption 美国出口管制分类ECCN编码 EAR99 环保无铅 Active 美国海关商品代码 8541.29.00.95 Automotive No PPAP No 产品类别 Power MOSFET Configuration Single Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 200 Maximum Gate Source Voltage (V) ±10 Maximum Continuous Drain Current (A) 17 Maximum Drain Source Resistance (MOhm) 180@5V Typical Gate Charge @ Vgs (nC) 66(Max)@5V Typical Input Capacitance @ Vds (pF) 1800@25V Maximum Power Dissipation (mW) 3100 Typical Fall Time (ns) 52 Typical Rise Time (ns) 83 Typical Turn-Off Delay Time (ns) 44 Typical Turn-On Delay Time (ns) 8 Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 150 Mounting Surface Mount Package Height 4.83(Max) Package Width 9.65(Max) Package Length 10.41(Max) PCB changed 2 Tab Tab Standard Package Name TO-263 Supplier Package D2PAK Pin Count 3
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Passive 被动 – Walsin/Cal chip/ Murata/Yageo /TDK /Samsung
IRL640SPBF
Vishay
TO-263
23+
