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欧盟RoHS指令 Compliant with Exemption 美国出口管制分类ECCN编码 EAR99 环保无铅 Active 美国海关商品代码 8541.29.00.95 SVHC Yes SVHC超标 Yes Automotive No PPAP No 产品类别 Power MOSFET Configuration Single Process Technology HEXFET Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage (V) 55 Maximum Gate Source Voltage (V) ±20 Maximum Gate Threshold Voltage (V) 4 Maximum Continuous Drain Current (A) 49 Maximum Drain Source Resistance (MOhm) 17.5@10V Typical Gate Charge @ Vgs (nC) 63(Max)@10V Typical Gate Charge @ 10V (nC) 63(Max) Typical Input Capacitance @ Vds (pF) 1470@25V Maximum Power Dissipation (mW) 3800 Typical Fall Time (ns) 45 Typical Rise Time (ns) 60 Typical Turn-Off Delay Time (ns) 44 Typical Turn-On Delay Time (ns) 12 Minimum Operating Temperature (°C) -55 Maximum Operating Temperature (°C) 175 Packaging Tape and Reel Mounting Surface Mount Package Height 4.83(Max) Package Width 9.65(Max) Package Length 10.67(Max) PCB changed 2 Tab Tab Standard Package Name TO-263 Supplier Package D2PAK Pin Count 3 Lead Shape Gull-wing
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IRFZ44NSTRLPBF
Infineon
TO-263
23+