供应S25FL256LAGNFB010存储器 RAM 芯片原厂原装进口现货
地区：广东 深圳
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| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | 3A991b.1.a. |
| 环保无铅 | Active |
| 美国海关商品代码 | 8542.32.00.71 |
| Automotive | Yes |
| PPAP | Yes |
| Cell Type | NOR |
| Chip Density (bit) | 256M |
| Architecture | Sectored |
| Boot Block | Yes |
| Block Organization | Symmetrical |
| Location of Boot Block | Bottom|Top |
| Address Bus Width (bit) | 32 |
| Sector Size | 4Kbyte x 8192 |
| Page Size | 256byte |
| Number of Bits/Word (bit) | 1/2/4 |
| Number of Words | 256M/128M/64M |
| Programmability | Yes |
| Timing Type | Synchronous |
| Max. Access Time (ns) | 8 |
| Maximum Erase Time (S) | 360/Chip |
| Maximum Programming Time (ms) | 1.2/Page |
| Process Technology | 65nm, Floating Gate |
| Interface Type | Serial (SPI, Dual SPI, Quad SPI) |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Maximum Operating Frequency (MHz) | 133 |
| Typical Operating Supply Voltage (V) | 3|3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Programming Voltage (V) | 2.7 to 3.6 |
| Operating Current (mA) | 35 |
| Program Current (mA) | 50 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 105 |
| Supplier Temperature Grade | Automotive |
| Command Compatible | Yes |
| ECC Support | No |
| Support of Page Mode | No |
| Minimum Endurance (Cycles) | 100000 |
| Packaging | Tray |
| Mounting | Surface Mount |
| Package Height | 0.73 |
| Package Width | 6 |
| Package Length | 5 |
| PCB changed | 8 |
| Supplier Package | WSON EP |
| Pin Count | 8 |
S25FL256LAGNFB010
Infineon Technologies AG
WSON EP-8
23+
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