ZOS-R1106-03

ZOS-R1106-03 由红外发射二极管和 NPN 硅光晶体管组成，它们并排封装在 黑色热塑性外壳中的汇聚光轴上。光电晶体管只接收来自 IR 的辐射。这是正 常情况。但当物体在中间时，光电晶体管不能接收辐射。有关更多组件信息，请参阅 IR 和 PT。

The ZOS-R1106-03 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between , phototransistor could not receives the radiation.For additional component information , please refer to IR and PT

特性Feature

--可靠性高、辐射强度高、低电压驱动

 High reliability、High radiant intensity、Low forward voltage、

 --感应速度快、感光度强 

Fast response time、High photo sensitivity 

--截止感应波长 940nm

 Cut-off visible wavelength λp=940nm 

--无铅材料、Rohs 

Pb.Free、RoHS compliant version

应用Application

--打印机、非接触开关 

Printer、Non-contact Switching 

--智能电子产品

 Intelligent Electronic Products

 --工业机械设备 

Industrial Intelligent Equipment

--安防防护应用 

Safety Application Products

光电特性Electro-Optical Characteristics

产品尺寸Package Dimension