ZOS-T0804-R

ZOS-T0804-R 由红外发射二极管和 NPN 硅光晶体管组成，它们并排封装在黑 色热塑性外壳中的汇聚光轴上。光电晶体管只接收来自 IR 的辐射。这是正常 情况。但当物体在中间时，光电晶体管不能接收辐射。有关更多组件信息， 请参阅 IR和 PT。

The ZOS-T0804-R consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between , phototransistor could not receives the radiation.For additional component information , please refer to IR and PT

特性Feature

--可靠性高、辐射强度高、低电动压驱

High reliability、High radiant intensity、Low forward voltage、

--感应速度快、感光度强

 Fast response time、High photo sensitivity

--截止感应波长 940nm 

Cut-off visible wavelength λ=940nm

--无铅材料、Rosh 

 Pb.Free、RoHS compliant version

应用Application

--打印机、非接触开关

Printer、Non-contact Switching

 --智能电子产品

 Intelligent Electronic Products 

--工业机械设备

 Industrial Intelligent Equipment 

--安防防护应用

 Safety Application Products

额定值Absolute Maximum Ratings

光电特性Electro-Optical Characteristics 

产品尺寸Package Dimens