NT5CB256M16ER-FL 全新原装 DDR3

NT5CB256M16ER-FL 全新原装 DDR3

Basis DDR3 Compliant

- 8n Prefetch Architecture

- Differential Clock(CK/CK) and Data Strobe(DQS/DQS)

- Double-data rate on DQs, DQS and DM

Data Integrity

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modes

Power Saving Mode

- Power Down Mode

Signal Integrity

- Configurable DS for system compatibility

- Configurable On-Die Termination

- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)

 Signal Synchronization

- Write Leveling via MR settings 5

- Read Leveling via MPR

Interface and Power Supply

- SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)

- SSTL_1352 for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)

全新原包原装可含税（香港可交）

MT29F64G08CBABBWPR:B

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304EC-EGCG

K4B4G1646E-BCNB

K4A8G165WB-BCRC

MT52L512M32D2PF-107WT:B

MT52L256M32D1PF-107WT:B

MT41K64M16TW-107:J

MT41K64M16TW-107IT:J

MT41K512M8DA-107:P

MT41K256M16TW-107:P

MT41K256M16TW-107IT:P

MT41K256M16TW-107AIT:P

MT41K128M16JT-125:K

MT41K128M16JT-125IT:K

MT40A512M16LY-075:E

MT29F64G08CBABBWPR:B

MT29F4G08ABAEAWP:E

MT29F2G08ABAGAWP-IT:G

MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP:E

MT29F2G08ABAEAH4:E

MT29F2G01ABAGDWB-IT:G

MT53D512M64D4HR-053 WT:D