MT40A1G16KD-062E:E 原装全新 DDR3

MT40A1G16KD-062E:E 原装全新 DDR4

1. VDD = VDDQ = 1.2V ±60mV

2. VPP = 2.5V, –125mV, +250mV

3. On-die, internal, adjustable VREFDQ generation

4. 1.2V pseudo open-drain I/O

5. TC maximum up to 95°C

6. – 64ms, 8192-cycle refresh up to 85°C

7. – 32ms, 8192-cycle refresh at >85°C to 95°C

8. 16 internal banks (x4, x8): 4 groups of 4 banks each

9. 8 internal banks (x16): 2 groups of 4 banks each

10. 8n-bit prefetch architecture

11. Programmable data strobe preambles

12. Data strobe preamble training

13. Command/Address latency (CAL)

14. Multipurpose register READ and WRITE capability

15. Write leveling

16. Self refresh mode

17. Low-power auto self refresh (LPASR)

18. Temperature controlled refresh (TCR)

19. Fine granularity refresh

20. Self refresh abort

21. Maximum power saving

22. Output driver calibration

23. Nominal, park, and dynamic on-die termination(ODT)

24. Data bus inversion (DBI) for data bus

25. Command/Address (CA) parity

26. Databus write cyclic redundancy check (CRC)

27. Per-DRAM addressability

28. Connectivity test

29. JEDEC JESD-79-4 compliant

30. sPPR and hPPR capability

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