供应W25Q256JVEIQ 原装 NAND FLSAH

W25Q256JVEIQ 原装 NAND FLSAH

3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI

W25Q256JVEIQ 原装 NAND FLSAH 的技术参数：

W25Q256JVEIQ 原装 NAND FLSAH  的描述：

The W25Q256JV (256M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices.

 They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 1μA for power-down.

All devices are offered in space-saving packages. The W25Q256JV array is organized into 131,072 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase).

 The W25Q256JV has 8,192 erasable sectors and 512 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. The W25Q256JV supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2, and I/O3.

SPI clock frequencies of W25Q256JV of up to 133MHz are supported allowing equivalent clock rates of 266MHz (133MHz x 2) for Dual I/O and 532MHz (133MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories.

MT29F64G08CBABAWP固带 10K 23+

KLM8G1GETF-B041 10K 23+

KLMBG2JETD-B041 10K 23+

KLMAG1JETD-B041 10K 23+

K4E6E304EC-EGCG 10K 23+

K4B4G1646E-BCNB 10K 23+

K4F6E3S4HM-MGCJ 10K 23+

K4AAG165WA-BCWE 10K 23+

K4B4G0846E-BCNB 10K 23+

H5TC4G83BFR-PBA 95 17+

H26M41204HPR 5 20+

SDTNRGAMA-008G 35 21+

K4UBE3D4AA-MGCL 10K 23+

K4UBE3D4AB-MGCL 10K 23+

K4U6E3S4AA-MGCR 10K 23+

优势出，有需要的欢迎联系