供应MX25L3233FZBI-08G原装 NOR FLASH

MX25L3233FZBI-08G原装 NOR FLASH

FLASH - NOR 存储器 IC 32Mb SPI - 四 I/O 133 MHz 8-USON（4x3）闪存

MX25L3233FZBI-08G原装 NOR FLASH 的技术参数：

KLMBG2JETD-B041 10K 22+

KLMAG1JETD-B041 10K 22+

KLM8G1GETF-B041 10K 22+

KLM4G1FETE-B041 10K 22+

K4E8E324EB-EGCF 10K 22+

K4E6E304EB-EGCF 10K 22+

K4E6E304EC-EGCG 10K 22+

K4B4G1646E-BCNB 10K 22+

K4A8G165WB-BCRC 10K 22+

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MX25L3233FZBI-08G原装 NOR FLASH 的描述：

MX25L3233F is 32Mb bits Serial NOR Flash memory, which is configured as 4,194,304 x 8 internally. When it is in four I/O mode, the structure becomes 8,388,608 bits x 4. When it is in two I/O mode, the structure becomes 16,777,216 bits x 2. MX25L3233F features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode.

The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. MX25L3233F, MXSMIO? (Serial Multi I/O) flash memory, provides sequential read operation on the whole chip and multi-I/O features.

When it is in quad I/O mode, the SI pin, SO pin, WP# pin and HOLD# pin become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data Input/Output.

 After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256 bytes) basis. Erase command is executed on 4K-byte sector, 32K-byte/64K-byte block, or whole chip basis.

The status read command can be issued to detect completion status of a program or erase operation via WIP bit. When the device is not in operation and CS# is high, it is put in standby mode.

The MX25L3233F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles.