MT46H32M16LFBF-5 IT:C TR 原装 LPDDR

丝印代码：D9LQQ

The 512Mb Mobile low-power DDR SDRAM is a high-speed CMOS, dynamic randomaccess memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. Each of the x16’s 134,217,728-bit banks is organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8192 rows by 512 columns by 32 bits.

MT46H32M16LFBF-5 IT:C TR 原装 LPDDR 的技术参数：

制造商	MICRON
存储器类型	易失
存储器格式	DRAM
技术	SDRAM - DDRL
存储容量	512Mb (32M x 16)
存储器接口	并联
时钟频率	200MHz
电压 - 供电	1.7V ~ 1.95V
工作温度	-40°C ~ 85°C（TC）
访问时间	5 ns
安装类型	表面贴装型
封装/外壳	FBGA-60
供应商器件封装	60-ball FBGA, 8 x 9

MTFC8GAKAJCN-4MIT	MICRON/镁光
MTFC4GACAJCN-4MIT	MICRON/镁光
MTFC4GACAJCN-1MWT	MICRON/镁光
MT53E256M32D2DS-053WT:B	MICRON/镁光
MT53D512M64D4HR-053WT:D	MICRON/镁光
MT53D512M32D2DS-053WT:D	MICRON/镁光
MT52L512M32D2PF-107WT:B	MICRON/镁光
MT52L256M32D1PF-107WT:B	MICRON/镁光
MT41K64M16TW-107:J	MICRON/镁光
MT41K64M16TW-107IT:J	MICRON/镁光
MT41K512M8DA-107:P	MICRON/镁光
MT41K256M16TW-107:P	MICRON/镁光
MT41K256M16TW-107IT:P	MICRON/镁光
MT41K256M16TW-107AIT:P	MICRON/镁光
MT41K128M16JT-125:K	MICRON/镁光
MT41K128M16JT-125IT:K	MICRON/镁光
MT40A512M16LY-075:E	MICRON/镁光
MT29F64G08CBABBWPR:B	MICRON/镁光
MT29F4G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAGAWP-IT:G	MICRON/镁光
MT29F2G08ABAEAWP-IT:E	MICRON/镁光
MT29F2G08ABAEAWP:E	MICRON/镁光
MT29F2G08ABAEAH4:E	MICRON/镁光
MT29F2G01ABAGDWB-IT:G	MICRON/镁光
MT53D512M64D4HR-053 WT:D	MICRON/镁光

型号

MT46H32M16LFBF-5 IT:C TR

制造商

MICRON/镁光

封装

FBGA

批次

22+

无铅/环保