MX30LF2G18AC-TI 闪存原装NAND FLASH

2Gb（256M x 8） 2.7 V ~ 3.6 V

IC FLASH 2GBIT PARALLEL 48TSOP

FLASH - NAND（SLC）存储器 IC 2Gb（256M x 8）并联 20 ns 48-TSOP

MX30LF2G18AC-TI 闪存原装NAND FLASH 的技术参数：

类别	存储器
制造商	Macronix
包装	托盘
零件状态	不适用于新设计
存储器类型	非易失
RoHS 状态	符合 ROHS3 规范
湿气敏感性等级 (MSL)	3（168 小时）
REACH 状态	非 REACH 产品
存储器格式	闪存
技术	FLASH - NAND（SLC）
存储容量	2Gb（256M x 8）
存储器接口	并联
写周期时间 - 字，页	20ns
访问时间	20 ns
电压 - 供电	2.7V ~ 3.6V
工作温度	-40°C ~ 85°C（TA）
安装类型	表面贴装型
封装/外壳	48-TFSOP（0.724"，18.40mm 宽）
供应商器件封装	48-TSOP

MX30LF2G18AC-TI 闪存原装NAND FLASH的描述：

The MX30LFxG18AC are 2Gb/4Gb SLC NAND Flash memory device.

Its standard NAND Flash features and reliable quality of typical P/E cycles 100K (with host ECC), which makes it most suitable for embedded system code and data storage.

The product family requires 4-bit ECC per (512+16)B. The MX30LFxG18AC is typically accessed in pages of 2,112 bytes for read and program operations.

The MX30LFxG18AC array is organized as thousands of blocks, which is composed by 64 pages of (2,048+64) byte in two NAND strings structure with 32 serial connected cells in each string. Each page has an additional 64 bytes for ECC and other purposes.

The device has an on-chip buffer of 2,112 bytes for data load and access. The Cache Read Operation of the MX30LFxG18AC enables first-byte read-access latency of 25us and sequential read of 20ns and the latency time of next sequential page will be shorten from tR to tRCBSY.

The MX30LFxG18AC power consumption is 30mA during all modes of operations (Read/Program/Erase), and 50uA in standby mode.