原装MT29F2G08ABAEAWP:E NAND FLASH

原装MT29F2G08ABAEAWP:E NAND FLASH

容量2G(256M*8Bit)NAND FLASH 内存闪存芯片

 

原装MT29F2G08ABAEAWP:E NAND FLASH的技术参数：

商品目录 NAND FLASH

存储器类型 Non-Volatile

存储器构架(格式) FLASH

存储器容量 2Gb (256M x 8)

存储器接口类型 Parallel

工作电压 2.7V ~ 3.6V

 

原装MT29F2G08ABAEAWP:E NAND FLASH 的特征：

• Open NAND Flash Interface (ONFI) 1.0-compliant1

 • Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 1024 blocks per plane

– Device size: 2Gb: 2048 blocks

• Asynchronous I/O performance

– tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs 3

– Program page: 200µs (TYP: 1.8V, 3.3V)3

 – Erase block: 700µs (TYP)

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode4

– Read page cache mode 4

– One-time programmable (OTP) mode

– Two-plane commands 4

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

First block (block address 00h) is valid when shipped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

• RESET (FFh) required as first command after poweron

• Alternate method of device initialization (Nand_Init) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

• Operating voltage range

– VCC: 2.7–3.6V

– VCC: 1.7–1.95V

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– 48-pin TSOP type 1, CPL2

– 63-ball VFBGA