NT5CC256M16EP-EK LPDDR3 动态随机存储器

原装NT5CC256M16EP-EK  DRAM动态随机存储器

NT5CC256M16EP-EK   Commercial DDR3(L) 4Gb SDRAM

低功耗双倍数据率同步动态随机存储器NT5CC256M16EP-EK的技术参数：

制造商 : NANYA

电压 : 1.35v

无铅/环保 : 无铅/环保

温度 : 0~95°C

速度 : 933 MHZ

容量 : 4Gb

Interface And Power : SSTL_135 (1.35V, 1.35V) / SSTL-15(1.35V, 1.35V)

Device Version : 5th Version

Grade : Commercial Grade

描述

The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.

These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and CK falling).

All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.