原装K4F6E3S4HM-MGCJ LPDDR4

原装K4F6E3S4HM-MGCJ LPDDR4

16Gb LPDDR4 SDRAM 200FBGA, 10x15 64Mb x16DQ x8banks x2channels

原装K4F6E3S4HM-MGCJ LPDDR4 的技术参数：

容量16 Gb

速率3733 Mbps

工作电压1.8 / 1.1 / 1.1 V

工作温度-25 ~ 85°C

封装200FBGA

架构x32

原装K4F6E3S4HM-MGCJ LPDDR4 的描述：

Samsung’s groundbreaking LPDDR4 transfers data faster with less energy, multiplying design options for ultra-thin devices, AI, VR and wearables.

LPDDR4-SDRAM is a high-speed synchronous DRAM device internally configured with either 1 or 2 channels. Dual channel is comprised of 8-banks with from 2Gb to 16Gb per channel density. The configuration for channel density that is greater than 16Gb is still TBD1).

These devices contain the following number of bits: Dual-channel SDRAM devices contain the following number of bits: 16Gb has 17,179,869,184 bits LPDDR4 devices use a 2 or 4 clocks architecture on the Command/Address (CA) bus to reduce the number of input pins in the system. The 6-bit CA bus contains command, address, and bank information. Each command uses 1, 2 or 4 clock cycle, during which command information is transferred on the positive edge of the clock. See command truth table for details. 

对LPDDR4SDRAM的读写访问是面向突发的；访问从选定位置开始，并在编程序列中继续执行编程数量的位置。访问从注册激活命令开始，然后是读、写或掩码写命令。与“激活”命令一致注册的地址和BA位用于选择要访问的行和行。 与“读、写或掩码写”命令同时注册的地址位用于选择突发访问的银行和起始列位置。在正常操作之前，必须初始化LPDDR4 SDRAM。