低压降LV值肖特基二极管 TSR30L150

低压降的TSR30L150肖特基二极管，能让电源过六级能效。本公司专业销售低压降二极管，有5A，10A,20,30A等低压降肖特基二极管，欢迎来电或者QQ上来定购及咨询。

Trench

MOS Barrier Schottky

Rectifier

 TO-220AB

 TSR30L150CT

 ITO-220AB

 TSR30L150CTF Features

 • Advanced

 trench technology

 • Low forward voltage drop

 • Low power losses

• High efficiency operation

• Lead Free Finish, RoHS Compliant

Applications

• DC/DC Converters

• AC/DC

Adaptors

• Switching

Power Supplies

• Freewheeling Diodes

Maximum ratings

and electrical characteristics (TJ = 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Maximum repetitive peak reverse voltage

VRRM 150 V

 Maximum average forward rectified

 current

 per device 30

  IF(AV)

 per diode 15

 A

 Peak forward

 surge current 8.3 ms single half

 sine-

 wave superimposed on rated load per diode

 IFSM 220 A

Operating junction and storage temperature range

TJ, TSTG -65 to +150°C

 Typical thermal

 resistance per leg

 TO-220AB 2 °C/W

 RƟJC

 ITO-220AB

 4 °C/W

 TYP. MAX.

 Instantaneous forward voltage

 per diode

 I =3A T =25°C 0.61 F J

 -

 -

 IF=3A 0.56

 TJ=125°C VF(1)

 IF=15A TJ=25°C

 0.77 0.85

 V

IF=15A 0.68 -

TJ=125°C

 Instantaneous reverse current

 per diode at

 rated reverse voltage

 T =25°C 10 50 uA J

 I R(2)

 TJ=125°C - 1 mA