TC58BVG0S3HTA00 SLC 【EEPROM SLC 1GB NAND 24NM 48TSOP】

•  Organization x8

Memory cell array  2112 × 64K × 8

Register  2112× 8

Page size  2112 bytes

Block size  (128K + 4K) bytes

•  Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

ECC Status Read

•  Mode control

Serial input/output

Command control

•  Number of valid blocks

Min 1004 blocks

Max 1024 blocks

•  Power supply

V CC = 2.7V to 3.6V

•  Access time

Cell array to register 40 μs typ.

Serial Read Cycle  25 ns min (CL=50pF)

•  Program/Erase time

Auto Page Program  330 μs/page typ.

Auto Block Erase  3.5 ms/block typ.

•  Operating current

Read (25 ns cycle)  30 mA max.

Program (avg.)  30 mA max

Erase (avg.)  30 mA max

Standby  50 μA max

•  Package

P-VFBGA67-0608-0.80-001 (Weight: TBD g typ.)

•  8bit ECC for each 528Bytes is implemented on a chip.