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Description
This new generation 40V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance and 0.6mm profile – ideal for low profile applications . This device is ideally suited to Handheld and lighten application
ApplicationGeneral Purpose Interfacing SwitchLoad SwitchingBattery Management ApplicationPower Management Functions
DIODES
U-DFN2020-6
3000
18+