供应STW40N95K5

Features:

  Industry’s lowest RDS(on) x area

  Industry’s best figure of merit (FoM)

  Ultra low gate charge

  100% avalanche tested

  Zener-protected

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.