XC18V04VQ44C 现场可编程门阵列

XC18V04VQ44C

XC18V04VQ44C

Figure 1: The high-switching capabilities and excellent thermal performance of SiC and GaN devices make them ideal for use in high-voltage and high-power switching applications. (Source: Forrest9/shutterstock.com)

Topologies of converters have also been refined, with the most efficient being "resonant" types in multi-switch half- or full-bridge configurations at high power. Three-phase bridges using IGBTs or MOSFETs are now commonly used to produce AC for motor drives. In all these topologies, ideal switches dissipate no power when they are off or on, and ideal inductors, transformers or capacitors dissipate no heat, so the focus of converter design is to use components that are closest to the ideal in performance while minimizing any transient dissipative conditions, such as when switches slew between on and off states. In modern designs, these "switching" losses are the largest contributors and can have high peak values.

XC18V04VQ44C