H26M11001AAR 海力士 原装现货欢迎询价

FEATURES

Technology:

55nm TSMC Embedded Flash (Flash + SRAM) process technology

Packaging:

Low cost and small package sizes

Multiple device densities with compatible package footprints for seamless migration between different device densities

RoHS6-compliant

Core Architecture:

H26M11001AAR

H26M11001AAR

H26M11001AAR

4-input look-up table (LUT) and single register Logic Element (LE)

LEs arranged in Logic Array Block (LAB)

Embedded RAM and user flash memory

Clocks and PLLs

Embedded multiplier blocks

General purpose I/Os

Internal Memory Blocks:

M9K — 9-kilobits (Kb) memory blocks

Cascadable blocks to create RAM, dual port, and FIFO functions

User Flash Memory:

User accessible non-volatile storage

High speed operating frequency

Large memory size

High data retention

Multiple interface option

Embedded Hard IP Embedded Multiplier Blocks:

Support for one 18 x 18 or two 9 x 9 multiplier modes

Cascadable blocks enabling creation of filters, arithmetic functions, and image processing pipelines

ADC:

12-bits successive approximation register (SAR) type

Up to 17 analog inputs

Cumulative speed up to 1 million samples per second (MSPS)

Integrated temperature sensing capability