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QGD = 0.65数控(典型值)。
1.1 General description
P-channel enhancement mode field effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
Low threshold voltage
Low on-state resistance.
1.3 Applications
Low power DC-to-DC converters
Battery management
Load switching
Battery powered portable equipment.
Quick reference data
VDS £ -20 V
ID £ - 3.9 A
RDSon £ 76 mW
Qgd = 0.65 nC (typ).
4.5V
3.9A
SOT23
-40+85