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NCE3080K DESCRIPTION
The NCE3080K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE3080K GENERAL FEATURES
● VDS =30V,ID =80A
RDS(ON) < 6.5mΩ @ VGS =10V
RDS(ON) < 10mΩ @ VGS =5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
NCE3080K 封装/参数
NCE3080K
NEC
TO-252
无铅环保型
贴片式
卷带编带包装
小功率
原装