常用功率三极管 S8050 S8550

S8050 SOT-23 40V 500mA 丝印:J3Y 高集电极电流特性。(IC = 500 ma) S8550互补。优秀的HFE线性。高总功耗。(PC = 300 mw)应用高集电极电流。

S8550 SOT-23 -40V -500mA 丝印:2TY 高集电极电流特性。(IC = -500 ma)S8050互补。优秀的HFE线性。应用高集电极电流。

S8050

参数测试条件最小TYP最大象征单位

集电极-基极击穿电压100 V(BR)CBO IC =μa,即40 V = 0

Collector-emitter击穿电压V(BR)IC = 0.1 ma,IB 25 V = 0 B

发射极基极击穿电压100 V(BR)EBO IE =μa,IC 5 V = 0

收集器截止电流断路器= 40 v,0.1μA IE = 0

收集器截止电流临时VCE = 20 v,IBμA 0.1 B = 0

发射器截止电流IEBO VEB = 5 v,0.1μA IC = 0

VCE = 1 v,IC马=0

直流电流增益hFE VCE = 1 v,IC 50 = 500 ma

饱和电压VCE(坐)IC = 500 ma,IB = 50 ma B 0.6 V

基极发射极电压饱和VBE(坐)IC = 500 ma,IB = 50 ma B 1.2 V

VCE = 6 v,IC = 20 ma

f = 30 MHz 150 MHz

S8550

参数标志测试条件最小最大单位

集电极-基极击穿电压-100 V(BR)CBO IC =μa,IE = 0 -40 V

Collector-emitter击穿电压V(BR)IC = 1,IB = 0 B -25 V

发射极基极击穿电压-100 V(BR)EBO IE =μa,IC 5 V = 0

收集器截止电流断路器= -40 v,-0.1μA IE = 0

收集器截止电流临时VCE = -20 v,IBμA -0.1 B = 0

发射器截止电流IEBO VEB = 3 v,-0.1μA IC = 0

VCE = 1 v,IC马=

直流电流增益hFE

VCE = 1 v,IC 50 = -500 ma

饱和电压VCE(坐)IC = -500 mA,IB B = -50 mA -0.6 V

基极发射极电压饱和VBE(坐)IC = -500 mA,IB B = -50 mA -1.2 V

VCE = 6 v,IC = -20 ma

f = 30 MHz 150 MHz