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Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
先进的HEXFET功率MOSFET®国际
整流器采用先进的加工技术实现
极低的每硅阻力区。这样做的好处,
结合开关速度快和坚固耐用的
装置设计的HEXFET功率MOSFET是好的
众所周知,提供了一个非常有效的设计师
和可靠的设备,用于各种各样的应用。
在TO - 220封装普遍首选的所有
商业工业应用功耗
水平约50瓦。较低的热
电阻的TO - 220封装成本低的贡献
其广泛接受整个行业。
IRF540N
TO220
IR
2017
M24C02-RMN6TP(意法半导体)EEPROM存储器
TL431AIDBZR电压基准芯片
STM32F103R8T6 ARM微控制器
SN65HVD232DR收发器
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