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新洁能NCE60P04AY 原装正品,欢迎来电咨询合作
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4.6A RDS(ON) <75mΩ @ VGS=-10V RDS(ON) <96mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Load switch ● PWM application
Device Marking Device Device Package Reel Size Tape width Quantity 60P04AY NCE60P04AY SOT-23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -4.6 A Pulsed Drain Current IDM -17 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient(Note 2) RθJA 83.3 ℃/W
NCE60P04AY
NCE
SOT-23
无铅环保型
贴片式
卷带编带包装
-60V
±20 V
-4.6A
-17A