新洁能NCEP60T15G DC/DC 高频开关MOSFET

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新洁能NCEP60T15G  原装正品，欢迎来电咨询合作

NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =150A RDS(ON) < 3.1mΩ @ VGS=10V (Typ:2.8mΩ) ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP60T15G NCEP60T15G DFN5X6-8L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (Silicon Limited) ID 150 A Drain Current-Continuous(TC=100℃) ID (100℃) 105 A Pulsed Drain Current IDM 600 A Maximum Power Dissipation PD 200 W Derating factor 1.6 W/℃ Single pulse avalanche energy (Note 5) EAS 819 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ D D D D S S