ST品牌 STP75NF75 应用DC-DC转换器 MOSFET

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N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PAK STripFET™ II Power MOSFET General features ■ Exceptional dv/dt capability ■ 100% avalanche tested Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications ■ Switching application Internal schematic diagram

Part number Marking Package Packaging STB75NF75T4 B75NF75 D2PAK Tape & reel STP75NF75 P75NF75 TO-220 Tube STP75NF75FP P75NF75 TO-220FP Tube

Table 1. Absolute maximum ratings Symbol Parameter Value Unit D2PAK /TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 75 V VDGR Drain-gate voltage (RGS = 20KΩ) 75 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 80 80 A ID (1) Drain current (continuous) at TC=100°C 70 70 A IDM(2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 320 A PTOT Total dissipation at TC = 25°C 300 45 W Derating factor 2.0 0.3 W/°C dv/dt (3) 3. ISD ≤ 80A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Peak diode recovery voltage slope 12 V/ns EAS (4) 4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V Single pulse avalanche energy 700 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) -- 2000 V TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C