ST品牌STP65NF06功率MOSFET

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N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features ■ Standard level gate drive ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Internal schematic diagram

Part number Marking Package Packaging STD65NF06 D65NF06 DPAK Tape & reel STP65NF06 P65NF06 TO-220 Tube

Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 60 A ID Drain current (continuous) at TC = 100°C 42 A IDM(1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 240 A Ptot Total dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C dv/dt (2) 2. ISD ≤60A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Peak diode recovery voltage slope 10 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 30A, VDD = 40V Single pulse avalanche energy 390 mJ Tstg Storage temperature -55 to 175 °C