台湾UTC品牌4N65K的MOS管

深圳黄金树科技有限公司代理美国福斯特FIRST，无锡新洁能股份有限公司NCEPOWER功率产品，江苏捷捷微JJM可控硅 等二三极，肖特基 LOWVF值电子元件器 本公司长期有库存 ，台湾UTC品牌4N65K TO252封装是无铅环保型贴片MOSFET MOS管主要应用于开关电源，LED电源上，

4N65K Power MOSFET

Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250μA 650 V

Drain-Source Leakage Current I DSS V DS = 650 V, V GS = 0 V 10 μA

Forward V GS = 30 V, V DS = 0 V 100 nA

Gate-Source Leakage Current

Reverse

I GSS

V GS = -30 V, V DS = 0 V -100 nA

Breakdown Voltage Temperature Coefficient △ BV DSS /△T J I D =250μA, Referenced to 25°C 0.6 V/°С

ON CHARACTERISTICS

Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250μA 2.0 4.0 V

Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, I D = 2.2A 1.72 2.5 Ω

V DS = 25 V, V GS = 0V,

f = 1MHz

5 11 pF

SWITCHING CHARACTERISTICS

Total Gate Charge Q G 17 20 nC

Gate-Source Charge Q GS 4.9 nC

Gate-Drain Charge Q GD

V DS =50V, V GS =10V,

I D =1.3A, I D =100μA (Note 1, 2)

3.7 nC

Turn-On Delay Time t D(ON) 44 60 ns

Turn-On Rise Time t R 50 100 ns

Turn-Off Delay Time t D(OFF) 80 130 ns

Turn-Off Fall Time t F

V DD =30V, V GS =10V, I D =0.5A,

R G =25Ω (Note 1, 2)

45 70 ns

I S 4.4 A

Maximum Pulsed Drain-Source Diode

Forward Current

I SM 17.6 A

Drain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 4.4A 1.4 V

Reverse Recovery Time t rr 440 ns

Reverse Recovery Charge Q rr

I S =4.4A, V GS =0 V

dI F /dt=100A/μs (Note1) 2.5 μCDrain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 4.4A 1.4 V


Reverse Recovery Time t rr 440 ns


Reverse Recovery Charge Q rr


I S =4.4A, V GS =0 V

dI F /dt=100A/μs (Note1) 2.5 μC