IRFR024N 55V/N沟道MOS管

IRFR024N特点

Ultra Low On-Resistance

Surface Mount (IRFR024N)

Straight Lead (IRFU024N)

Advanced Process Technology

Fast Switching l Fully Avalanche Rated

超低导通电阻

表面贴装（ IRFR024N ）

直铅（ IRFU024N ）

先进的工艺技术

快速开关

全额定雪崩

IRFR024N描述

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

国际整流器第五代HEXFETs利用先进加工技术，以实现尽可能低的导通电阻每硅片面积。这样做的好处，结合快速开关速度和坚固耐用的设备的设计，HEXFET功率MOSFET是众所周知的，为设计人员提供了广泛的一个非常有效的装置使用各种应用程序。

这是DPAK专为表面安装用气相，红外线，或波峰焊技术。直铅版本（IRFU系列）是通孔安装的应用程序。电力消在典型的表面贴装应用中，对水平可达1.5瓦是可能的。