STP6N120K3 N沟道/1200V/6A 场效应管

STP6N120K3产品描述

这些SuperMESH3™功率mosfet是改进

的结果应用于意法半导体的SuperMESH™技术,

结合一种新的优化的垂直结构。

这些设备拥有极低的onresistance,

优越的动态性能和高雪崩能力,

使它们适合最苛刻的应用程序。

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low onresistance,

superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

STP6N120K3产品特性和优势

STFW6N120K3 1200V  <2.4Ω 6A 63W

STP6N120K3  1200V  <2.4Ω 6A 150W

STW6N120K3  1200V  <2.4Ω 6A 150W

100%雪崩测试

非常大的雪崩性能

门费用最小化

非常低的固有的功放

Zener-protected

100% avalanche tested

Extremely large avalanche performance

Gate charge minimized

Very low intrinsic capacitances

Zener-protected