FQP6N60C 600V/功率场效应晶体管

FQP6N60C概述

These N-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

这些N沟道增强模式功率场效应晶体管采用飞兆专有的平面条形DMOS技术生产。这一先进技术是专为最大程度地降低导通阻抗，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件非常适合高效开关电源、功率因数校正和半桥拓扑的电子灯整流器。

FQP6N60C特性

5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V

Low gate charge ( typical 16 nC)

Low Crss ( typical 7 pF) ï Fast switching

100% avalanche tested

Improved dv/dt capability

5.5 A，600 V，RDS(on) = 2.0Ω @ VGS = 10 V

低栅极电荷（典型值16 nC）

低Crss（典型值7 pF）

快速开关

100%经过雪崩测试

可提高dv/dt处理能力

FQP6N60C新到大量原装现货